Chair : Prof. Takashi Matsuoka, Tohoku University, Japan
Nitride semiconductors InGaAlN is developing for the applications from switching devices such as transistors pf HEMTs to light emitting devices of LEDs and LDs. Transistors are strongly expected in the field of high power, high voltage, and high frequency. In the part of base stations for cellar phones, HEMTs have been applied. For these applications, we have to fabricate native substrates and to improve the crystalline quality of epitaxial films. These applications and efforts are indispensable fro the sustainable society. In this workshop, we discuss the crystal growth, material properties, devices, and their applications..