Abstract

Microwave assisted chemical bath deposition (MW-CBD) method has attracted attention in fabrication of Nitrogen (N) doped ZnO nanostructures. The MW-CBD method was used to prepare nanostructure N doped ZnO films onto silicon (Si) substrates. Zinc nitrate hexahydrate, Ammonium nitrate and an equal molar concentration of hexamethylenetetramine were dissolved in DI water. The solution was stirred 2 h at 90 �C. After, solution was irradiated using a temperature-controlled microwave synthesis system at 600 W and 10 min irradiation time. The films were washed with DI water to remove the remaining salt. Finally, the films were dried at 60oC for 1 h. The effect of N content on the structural, morphological and optical properties of ZnO films was investigated. To investigate the crystalline structure and the orientation of the films, XRD patterns were used. The lattice parameters and texture coefficient values of the films were determined. The important changes in crystalline structure of the ZnO films were observed due to the N content. Field emission scanning electron microscope (FESEM) was used to analyze the surface morphology of the ZnO films. The reflectance values converted to absorbance by application of the Kubelka�Munk function were used to determine the value of optical band gap of the films