Abstract

Spinel thin films were prepared by the metal organic decomposition (MOD) to develop new thermal imaging materials annealed at low temperature of 400oC. The effects of Cu sputtering on the electrical properties of the annealed films were investigated in this study. Nickel copper manganite (Ni-Cu-Mn) films were deposited on the sputtered Cu layer (10 nm) at room temperature. The annealing temperature of the Ni-Cu-Mn films was effectively reduced to 400oC without degradation of the electrical properties. These results could be attributed to the improved morphology and crystallinity of the films. A single phase of cubic spinel structure was confirmed for the annealed films, which showed a negative temperature coefficient of resistance (NTCR) characteristics. Good electrical properties with values of resistivity = 100 Ω�cm and TCR = -2.4 %/K at room temperature were obtained in [(Ni0.1Mn0.9)1-xCux]3O4 (x=0.19) films annealed at 400oC for 1h. This would enable integration of the functional material on standard complementary metal-oxide-semiconductor (CMOS) read-out circuitry, which typically tolerates temperatures ≤ 400oC for uncooled microbolometer applications